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| NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 2 APRIL 94 FEATURES * 25 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt APPLICATIONS * Motor driver * DC-DC converters ZTX649 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C derate above 25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg 35 25 5 6 2 E-Line TO92 Compatible VALUE UNIT V V V A A W mW/ C C 1 5.7 -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL MIN. V(BR)CBO V(BR)CEO V(BR)EBO ICBO 35 25 5 0.1 10 0.1 0.12 0.23 0.9 0.8 70 100 75 15 150 200 200 150 50 240 0.3 0.5 1.25 1 TYP. MAX. UNIT V V V A A A CONDITIONS. IC=100A IC=10mA* IE=100A VCB=30V VCB=30V,T amb =100C VEB=4V IC=1A, IB=100mA* IC=2A, IB=200mA* IC=1A, IB=100mA* IC=1A, VCE=2V* IC=50mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=6A, VCE=2V* Emitter Cut-Off Current IEBO VCE(sat) VBE(sat) VBE(on) hFE V V V V 300 Transition Frequency fT MHz IC=100mA, VCE=5V f=100MHz 3-216 ZTX649 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Output Capacitance Switching Times SYMBOL MIN. Cobo ton toff TYP. 25 55 300 MAX. 50 UNIT pF ns ns CONDITIONS. VCB=10V f=1MHz IC=500mA, VCC=10V IB1=IB2=50mA *Measured under pulsed conditions. Pulse Width=300s. Duty cycle 2% THERMAL CHARACTERISTICS PARAMETER Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case SYMBOL Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) MAX. 175 116 70 UNIT C/W C/W C/W Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. 2.5 200 Max Power Dissipation - (Watts) Thermal Resistance (C/W) D=1 (D.C.) 2.0 t1 D=t1/tP tP C 1.5 as e te m pe 1.0 Am ra 100 D=0.5 bie tu nt t re em 0.5 0 per at u re D=0.2 D=0.1 Single Pulse -40 -20 0 20 40 60 80 100 120 140 160 180 200 0 0.0001 0.001 0.01 0.1 1 10 100 T -Temperature (C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-217 ZTX649 TYPICAL CHARACTERISTICS 220 0.8 200 180 VCE=2V VCE(sat) - (Volts) 0.6 IC/IB=10 0.4 hFE - Gain 0.1 1 10 160 140 120 100 80 0.2 60 40 0 0.01 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 2.2 2.0 1.8 1.4 1.2 VBE(sat) - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.01 0.1 1 10 IC/IB=10 VBE - (Volts) 1.6 1.0 VCE=2V 0.8 0.6 0.0001 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC 10 Single Pulse Test at Tamb=25C td tr tf ns 140 VBE(on) v IC IC - Collector Current (Amps) IB1=IB2=IC/10 Switching time 1.0 120 100 80 60 40 20 0 0.01 tf ts tr td ts ns 1000 800 600 400 200 0 0.1 1 0.1 D.C. 1s 100ms 10ms 1.0ms 0.01 1 10 100 1000 VCE - Collector Voltage (Volts) IC - Collector Current (Amps) Safe Operating Area Switching Speeds 3-218 |
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